BG 3230 E6327

BG3230_BG3230R DUAL N-Channel MOSFET Tetrode • Low noise gain controlled input stages of UHF- 4 5 6 and VHF-tuners with 5V supply voltage 1 • Two AGC amplifiers in one single package 2 3 • Integrated stabilized bias network • Integrated gate protection diodes • High gain, low noise figure • Improved cross modulation at gain reduction • High AGC-range BG3230 BG3230R Drain $ # " AGC RF Input * )  G2 G1 RF Output + DC GND ! ESD (Electrostatic discharge) sensitive device, observe handling precaution! Type Package Pin Configuration Marking BG3230 SOT363 1=G1* 2=G2 3=D* 4=D** 5=S 6=G1** KBs BG3230R SOT363 1=G1* 2=S 3=D* 4=D** 5=G2 6=G1** KIs * For amp. A; ** for amp. B 180° rotated tape loading orientation available Maximum Ratings Parameter Symbol Drain-source voltage VDS Continuous drain current ID Gate 1/ gate 2-source current ±IG1/2SM 1 Gate 1/ gate 2-source voltage ±V G1/G2S 6 Total power dissipation Ptot 200 Storage temperature Tstg -55 ... 150 Channel temperature Tch 150 1 Value 8 25 Unit V mA V mW °C 2005-11-03 BG3230_BG3230R Thermal Resistance Parameter Symbol Value Unit Channel - soldering point1) Rthchs ≤ 280 K/W Values Unit Electrical Characteristics Parameter Symbol min. typ. max. V(BR)DS 12 - - +V(BR)G1SS 6 - 15 ±V (BR)G2SS 6 - 15 +IG1SS - - 50 µA ±IG2SS - - 50 nA IDSS - - 100 µA IDSO - 13 - mA VG2S(p) - 1 - V DC Characteristics Drain-source breakdown voltage V ID = 100 µA, VG1S = 0 , VG2S = 0 Gate1-source breakdown voltage +IG1S = 10 mA, V G2S = 0 , VDS = 0 Gate2 source breakdown voltage ±IG2S = 10 mA, VG1S = 0 , V DS = 0 Gate1-source leakage current VG1S = 6 V, VG2S = 0 Gate 2 source leakage current ±V G2S = 6 V, VG1S = 0 , V DS = 0 Drain current VDS = 5 V, VG1S = 0 , VG2S = 4 V Operating current (selfbiased) VDS = 5 V, VG2S = 4 V Gate2-source pinch-off voltage VDS = 5 V, I D = 100 µA 1For calculation of R thJA please refer to Application Note Thermal Resistance 2 2005-11-03 BG3230_BG3230R Electrical Characteristics Symbol Parameter Values Unit min. typ. max. gfs - 33 - mS Cg1ss - 1.9 - pF Cdss - 1.1 - AC Characteristics - (verified by random sampling) Forward transconductance VDS = 5 V, V G2S = 4 V Gate1 input capacitance VDS = 5 V, V G2S = 4 V, f = 10 MHz Output capacitance VDS = 5 V, V G2S = 4 V, f = 10 MHz Power gain (self biased) Gp dB VDS = 5 V, V G2S = 4 V, f = 800 MHz - 24 - VDS = 5 V, V G2S = 4 V, f = 45 MHz - 31 - Noise figure (self biased) dB F VDS = 5 V, V G2S = 4 V, f = 800 MHz - 1.3 - VDS = 5 V, V G2S = 4 V, f = 45 MHz - 1.7 - 45 - - ∆G p Gain control range VDS = 5 V, V G2S = 4...0 V, f = 800 MHz Cross-modulation k=1%, fw=50MHz, funw=60MHz Xmod - AGC = 0 dB 90 - - AGC = 10 dB - 87 - AGC = 40 dB 96 100 - 3 2005-11-03 BG3230_BG3230R Total power dissipation Ptot = ƒ(TS) Output characteristics ID = ƒ(V DS) 300 14 mA mW 2V 12 11 ID P tot 10 200 1.9V 9 8 150 7 1.8V 6 5 100 1.7V 4 3 50 1.6V 2 1 0 0 20 40 60 80 100 120 °C 0 0 150 1 2 3 4 5 6 7 V 8 10 VDS TS Drain current ID = ƒ(V G1S) VDS = 5V Gate 1 forward transconductance g fs = ƒ(ID) VDS = 5V, VG2S = Parameter VG2S = Parameter 35 26 mA 4V mS 22 4V 20 25 3.5V ID gfs 18 20 3.5V 3V 16 14 12 15 10 3V 2.5V 8 10 6 4 5 2V 2 0 0 4 8 12 16 20 mA 0 0 26 ID 0.4 0.8 1.2 1.6 2 V 2.8 VG1S 4 2005-11-03 BG3230_BG3230R AGC characteristic AGC = ƒ(VG2S) AGC characteristic AGC = ƒ(V G2S) f = 800 MHz f = 200 MHz 0 0 dB dB -10 -15 -20 -30 AGC AGC -20 -25 -40 -30 -50 -35 -40 -60 -45 -50 -70 -55 -80 -60 -90 0 0.5 1 1.5 2 2.5 V 3 -65 0 4 VG2 0.5 1 1.5 2 2.5 3 V 4 VG2 Crossmodulation Vunw = (AGC) VDS = 5 V, Rg1 = 68 kΩ 120 Vunw dBµV 100 90 80 0 10 20 30 dB 50 AGC 5 2005-11-03 BG3230_BG3230R Crossmodulation test circuit VAGC VDS 4n7 R1 10 kOhm 2.2 µH 4n7 4n7 RL 50 Ohm 4n7 RGEN 50 Ohm RG1 50 Ohm VGG 6 2005-11-03 Package SOT363 BG3230_BG3230R Package Outline 2 ±0.2 0.9 ±0.1 +0.1 6x 0.2 -0.05 0.1 0.1 MAX. M 0.1 Pin 1 marking 1 2 3 A 1.25 ±0.1 4 0.1 MIN. 5 2.1 ±0.1 6 0.15 +0.1 -0.05 0.65 0.65 0.2 M A Foot Print 1.6 0.9 0.7 0.3 0.65 0.65 Marking Layout Manufacturer Date code (Year/Month) Laser marking 2005, June Pin 1 marking Type code BCR108S Example Standard Packing Reel ø180 mm = 3.000 Pieces/Reel Reel ø330 mm = 10.000 Pieces/Reel 0.2 2.3 8 4 Pin 1 marking 1.1 2.15 7 2005-11-03 BG3230_BG3230R Published by Infineon Technologies AG, St.-Martin-Strasse 53, 81669 München © Infineon Technologies AG 2005. All Rights Reserved. Attention please! The information herein is given to describe certain components and shall not be considered as a guarantee of characteristics. Terms of delivery and rights to technical change reserved. We hereby disclaim any and all warranties, including but not limited to warranties of non-infringement, regarding circuits, descriptions and charts stated herein. Information For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies Office (www.Infineon.com). Warnings Due to technical requirements components may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies Office. Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. 8 2005-11-03